
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
2.6
Fig. 7. Normalized R DS(on) vs. Junction Temperature
2.6
Fig. 8. R DS(on) Normalized to I D = 0.8A Value
vs. Drain Current
V GS = 0V
2.4
V GS = 0V
2.2
1.8
1.4
I D = 0.8A
2.2
2.0
1.8
1.6
T J = 125oC
5V - - - -
1.4
1.0
0.6
0.2
1.2
1.0
0.8
0.6
T J = 25oC
-50
-25
0
25
50
75
100
125
150
0
0.5
1
1.5
2
2.5
3
2.5
T J - Degrees Centigrade
Fig. 9. Input Admittance
2.2
I D - Amperes
Fig. 10. Transconductance
2
V DS = 30V
2
1.8
V DS = 30V
T J = - 40oC
1.6
1.5
1.4
1.2
25oC
125oC
1
0.5
0
T J = 125oC
25oC
- 40oC
1
0.8
0.6
0.4
0.2
0
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
0
0.5
1
1.5
2
2.5
1.3
1.2
1.1
1.0
V GS - Volts
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
V GS(off) @ V DS = 25V
BV DSX @ V GS = - 5V
5
4
3
2
I D - Amperes
Fig. 12. Forward Voltage Drop of Intrinsic Diode
V GS = -10V
T J = 125oC
0.9
0.8
1
0
T J = 25oC
-50
-25
0
25
50
75
100
125
150
0.3
0.4
0.5
0.6
0.7
0.8
0.9
T J - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
V SD - Volts